Semiconductor device modeling with spice
Bibliographic details
Additional authors
Paolo, Antognetti
Summary
List of Physical Parameters Foreword by Robert W. Dutton, Stanford University Preface Chapter 1. PN Junction Diode and Schottky Diode 1.1 DC Current- Voltage Characteristics 1.2 Static Model 1.3 Large- Signal Model 1.4 Small- Signal Model 1.5 Schottky Diode and its implementation in SPICE2 1.6 Temperature and Area Effects on the Diode Model Parameters 1.7 SPICE3 Models 1.8 HSPICE Models 1.9 PSPICE Models References Chapter 2. Bipolar Junction Transistor (BJT) 2.1 Transistor Conversions and Symbols 2.2 Ebers-Moll Static Model 2.3 Ebers-Moll Large- Signal Model 2.4 Ebers-Moll Small- Signal Model 2.5 Gummel-Poon Static Model 2.6 Gummel-Poon Large- Signal Model 2.7 Gummel-Poon Small- Signal Model 2.8 Temperature and Area Effects on the BJT Model Parameters 2.9 Power BJT Model 2.10 SPICE3 Models 2.11 HSPICE Models 2.12 PSPICE Models References Chapter 3. Junction Field-Effect Transistor (JFET) 3.1 Static Model 3.2 Large- Signal Model and its implementation in SPICE2 3.3 Small- Signal Model and its implementation in SPICE2 3.4 Temperature and Area Effects on the JFET Model Parameters 3.5 SPICE3 Models 3.6 HSPICE Models 3.7 PSPICE Models References Chapter 4. Metal Oxide-Semiconductor Transistor (MOST) 4.1 Structure and Operating Regions of the MOST 4.2 LEVEL 1 Static Model 4.3 LEVEL 2 Static Model 4.4 LEVEL 1 and LEVEL 2 Large-Signal Model 4.5 LEVEL 3 Static Model 4.6 LEVEL 3 Large-Signal Model 4.7 Comments on the Three Models 4.8 The Effects of Series Resistances 4.9 Small-Signal Models