ELECTRONICS ENGINEERING
ND
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ND
Summary
Semiconductor Materials and PropertiesGroup-IV materials, Covalent bond, Electron-hole concepts, Basic concepts of energy bands in materials, Concept of forbidden gap, Intrinsic and extrinsic semiconductors, Donors and acceptors impurities.Junction Diodep-n junction, Depletion layer, v-i characteristics, Diode resistance, Capacitance, Diode ratings (average current, Repetitive peak current, Non-repetitive current, Peak-inverse voltage).Diode Applications Rectifiers (half wave and full wave), Calculation of transformer utilisation factor and diode ratings, Filter (C-filter), Calculation of ripple factor and load regulation, Clipping circuits, Clamping circuits, Voltage multipliers.Breakdown Diodes Breakdown mechanisms (Zener and avalanche), Breakdown characteristics, Zener resistance, Zener diode ratings, Zener diode application as shunt regulator.Bipolar Junction TransistorBasic construction, Transistor action, CB, CE and CC configurations, Input/output characteristics, Biasing of transistors-fixed bias, Emitter bias, Potentials divider bias, Comparison of biasing circuits.Transistor AmplifierGraphical analysis of CE amplifier, Concept of voltage gain, Current gain, H-parameter model (low frequency), Computation of Ai, Av, Ri, Ro of single transistor CE and CC amplifier configurations.Field Effect TransistorJFET : Basic construction, Transistor action, Concept of pinch-off, Maximum drain saturation current, Input and transfer characteristics, Characteristics equation CG, CS and CD configurations, Fixed, Self-biasing.MOSFET : Depletion and enhancement type MOSFET-Construction, Operation and characteristics. Computation of Av, Ri, Ro of single FET amplifiers using all the three configurations.Switching Theory and Logic DesignNumber systems, Conversion of bases, Boolean algebra, Logic gates, Concepts of universal gate,.